Preparation of InGaAsP / InP MQW (Multiple Quantum Well)- structures and InP-samples. The samples were double-sided dimpled. A milling angle lower than 7° was not possible.
|Acceleration voltage:||4 kV and 2 kV (final step)|
|Milling angle:||7° (double-sided milling)|
|Sample movement:||Rotation and Oscillation (alternating)|
The use of small milling angles and low ion energy results in very clean samples. No In islands are visible on the samples. The lattice image of  oriented InP shows a nearly perfect lattice. This proves, that by using the correct milling parameters, conventional ion milling can also achieve very good preparation results. We could avoid reactive ion milling with iodine ions.
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