Preparation Conditions
Mechanical pre-preparation: The mechanical pre-preparation took place using the methods described in this chapter using a Ti grid. Double sided polishing of the sample was carried out with the Leica EM TXP Target Surfacing System: Diamond foils: 15 µm, 9 µm, 6 µm, 3 µm, 1 µm and 0.5 µm at 2200 rpm until the final sample thickness of 30 µm.
Ion milling
Sample holder: | Quick-clamp-holder |
Acceleration voltage: | 7 kV / 2 kV (final thinning) |
Milling angle: | 5° (milling on both sides) |
Sample movement: | Oscillation (45°) |
Results
The structures of interest lie within the radiated area of the sample. The structures were very evenly thinned, so that even high resolution TEM examination of the interfaces were possible.