Rapid Semiconductor Inspection with Microscope Contrast Methods
Performing quality control of semiconductors efficiently and reliably in the electronics industry by revealing critical details with light microscopy
![Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illumination. Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illumination. Processed_wafer_standard_and_oblique_brightfield_illumination.jpg](/fileadmin/_processed_/9/1/csm_Processed_wafer_standard_and_oblique_brightfield_illumination_8925f72fc1.jpg)
Semiconductor inspection during production of patterned wafers and ICs (integrated circuits) is important for identifying and minimizing defects. To enhance the efficiency of quality control at an early production stage and ensure reliable IC-chip performance, microscopy solutions should combine different contrast methods that provide complete and accurate information about different defects. Contrast methods, i.e., brightfield, darkfield, polarization, DIC, UV, oblique, and